hot electron injection meaning in Chinese

热电子注入

The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用衬底热电子注入技术，正电荷辅助隧穿电流可被大大的减弱。
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection , and the second step is oxides breakdown induced by hole trapping
首先注入的热电子在超薄栅氧化层中产生陷阱中心，然后空穴陷入陷阱导致超薄栅氧击穿。
The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide
通过计算注入到氧化层中的电子能量和硅衬底的电场的关系表明，热电子注入和fn隧穿的不同可以用氧化层中电子的平均能量来解释。